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FDPF20N50FT - N-Channel MOSFET

Download the FDPF20N50FT datasheet PDF. This datasheet also covers the FDP20N50F variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 210 m (Typ. ) @ VGS = 10 V, ID = 10 A.
  • Low Gate Charge (Typ. 50 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Aested.
  • Improve dv/dt Capability.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP20N50F_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP20N50F/ FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET March 2013 FDP20N50F / FDPF20N50FT N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A, 260 m Features • RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 50 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Aested • Improve dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control.