FDPF4N60NZ Datasheet | Fairchild Semiconductor

Features - RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A - Low Gate Charge (Typ. 8.3 n C) - Low Crss (Typ. 3.7 p F) - 100% Avalanche Tested - Improved dv/dt Capability - ESD Improved Capability - Ro HS pliant Applications - Consumer Appliances - Lighting - Uninterruptible Power Supply - AC-DC Power Supply November 2013 Description Uni FETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows Uni FET II MOSFET to withstand over 2k V HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat...