FDR8508P Datasheet | Fairchild Semiconductor

March 1999 Dual P-Channel, Logic Level, Power Trench TM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • -3.0 A, -30 V. • • • • RDS(ON) = 0.052Ω @ VGS = -10V RDS(ON) = 0.086Ω @ VGS = -4.5V. Low gate charge. (8n C typical). High performance trench technology for extremely low RDS(ON) High power and current handling capability. Applications • Load switch • DC/DC converter • Motor driving D2 Small footprint (38% smaller than a standard SO-8);     low profile package (1 mm thick); power handling     capability similar to SO-8. D1 D1 D2 5 6 S2 4 3 2 1 7 8 Super SOT-8 pin...