Description
This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment.
Features
- a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package. Features.
- V
V
DROP DROP
= 0.07 V @ V = 12 V, I = 1 A. R(ON) = 0.07 Ω IN L = 0.115 V @ V = 5 V, I = 1 A. R(ON) = 0.115 Ω. IN L.
- V
V
DROP
DROP
= 0.2 V @ V = 12 V, I =2.9 A. R(ON) = 0.07 Ω IN L = 0.2 V @ V = 5 V,I = 1.8 A. R(ON) = 0.115 Ω. IN L.
- Control MOSFET (Q1) includes Zener protection for.
- ESD ruggedness (>6kV Human Body Model). High density cell desig.
FDR8521L Datasheet
