FDR8521L Datasheet | Fairchild Semiconductor

August 2000 P-Channel MOSFET With Gate Driver For Load Switch Application General Description This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device Features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package. Features - V DROP DROP = 0.07 V @ V = 12 V, I = 1 A.R(ON) = 0.07 Ω IN L = 0.115 V @ V = 5 V, I = 1 A.R(ON) = 0.115 Ω. IN L - V DROP DROP = 0.2 V @ V = 12 V, I =2.9 A.R(ON) = 0.07 Ω IN L = 0.2 V @ V = 5 V,I = 1.8 A.R(ON) = 0.115 Ω. IN L - Control MOSFET (Q1) includes Zener protection for - ESD ruggedness (>6k V Human Body Model). High density cell design for extremely low on-resistance. Applications - Power management - Load switch VOU T,C1,CO 5 6 7 8 Q2 4 3 VIN ,R1,C i EQUIVALENT CIRCUIT R1,R 2,C1 VOU T,C1,CO R2 Q1 2...