Datasheet Summary
May 2003
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
- 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching, low gate charge (26nC typical)
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
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