FDS2734 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) =117mΩ at VGS =10V, ID = 3.0A - Max r DS(on) =126mΩ at VGS = 6V, ID = 2.8A - Fast switching speed - High performance trench low r DS(on) technology for extremely tm General Descriptions This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItra FET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application - DC-DC conversion - High power and current handling capability - Ro HS pliant D SO-8 .. 4 3 2 1 6 7 8 Pin 1 MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C unless otherwise noted Parameter Ratings 250 ±20 (Note 1a) (Note 3) (Note 1a) (Note 1b) 3.0 50 12.5 2.5 1.0 -55 to 150 Units V V A m J W o Single Pulse Avalanche Energy Power dissipation Power dissipation Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction- to -Ambient Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction -to- Case (Note 1a) (Note 1b) (Note 1) 50 125 25 o C/W Package Marking and Ordering Information Device Marking FDS2734 Device FDS2734 Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS2734 Rev. B .fairchildsemi. FDS2734 Single N-Channel UItra FET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆ TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to VDS = 200V,VGS=0 V 25o C 250 157 1 10 ±100 V m V/o C µA n...