Datasheet Details
| Part number | FDS2734 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 390.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
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| Part number | FDS2734 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 390.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
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s This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application DC-DC conversion High power and current handling capability RoHS compliant D SO-8 D D D 5 www.DataSheet4U.com 4 3 2 1 6 7 8 Pin 1 S S S G MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C unless otherwise noted Parameter Ratings 250 ±20 (Note 1a) (Note 3) (Note 1a) (Note 1b) 3.0 50 12.5 2.5 1.0 -55 to 150 Units V V A mJ W o Single Pulse Avalanche Energy Power dissipation Power dissipation Operating and Storage Junction Temperature Range C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction- to -Ambient Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction -to- Case (Note 1a) (Note 1b) (Note 1) 50 125 25 oC/W Package Marking and Ordering Information Device Marking FDS2734 Device FDS2734 Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS2734 Rev.
B 1 www.fairchildsemi.com FDS2734 Single N-Channel UItraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆ TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to VDS = 200V,VGS=0 V 25oC 250 157 1
FDS2734 Single N-Channel UItraFET Trench® MOSFET August 2006 FDS2734 N-Channel UItraFET Trench® MOSFET 250V, 3.
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