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FDS3512 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS3512 May 2001 FDS3512 80V N-Channel PowerTrench® MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V.
  • Low gate charge (13nC Typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.

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