Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- 4.0 A, 80 V
RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V.
- Low gate charge (13nC Typical)
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
FDS3512 Datasheet
