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FDS3580 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS3580 April 1999 PRELIMINARY FDS3580 80V N-Channel PowerTrenchTM.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V.
  • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Paramet.

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