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FDS3580 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V.
  • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Paramet.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS3580 April 1999 PRELIMINARY FDS3580 80V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V. • • • • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.