FDS3580 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET has been designed specifically to improve the overall efficiency of DC

synchronous or conventional switching PWM controllers.

Key Features

7.6 A, 80 V:  RDS(ON) = 0.029 W @ VGS = 10 V  RDS(ON) = 0.033 W @ VGS = 6 V.
Low Gate Charge (34 nC Typical).
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
Pb.
Free and Halide Free.

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FDS3580 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS3580
Manufacturer	onsemi
File Size	228.71 KB
Description	N-Channel MOSFET
Datasheet	FDS3580 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, POWERTRENCH), 80 V FDS3580 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC−DC power supply designs with higher overall efficiency. Features  7.6 A, 80 V:  RDS(ON) = 0.029 W @ VGS = 10 V  RDS(ON) = 0.