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FDS4070N3 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Key Features

  • 15.3 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching, low gate charge.
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain.

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FDS4070N3 February 2004 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications • Synchronous rectifier • DC/DC converter Features • 15.3 A, 40 V. RDS(ON) = 7.