FDS4435BZ_F085 Overview
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time...
FDS4435BZ_F085 Key Features
- Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
- Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery
