Datasheet4U Logo Datasheet4U.com

FDS4435BZ_F085 - P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A.
  • Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A.
  • Extended VGSS range (-25V) for battery.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS4435BZ-F085 P-Channel Power MOSFET ON Semiconductor
FDS4435BZ P-Channel MOSFET ON Semiconductor
FDS4435BZ P-Channel MOSFET VBsemi
FDS4435 -30V P-Channel MOSFET UMW
FDS4435-NL P-Channel 30V MOSFET VBsemi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS4435BZ P-Channel PowerTrench MOSFET
FDS4435 P-Channel MOSFET
FDS4435A P-Channel MOSFET
FDS4410 N-Channel MOSFET
FDS4410A Single N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant „ Qualified to AEC Q101 July 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.