Datasheet4U Logo Datasheet4U.com

FDS4435BZ_F085 Datasheet P-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS4435BZ_F085 P-Channel PowerTrench® MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) (Note 4) Ratings -30 ±25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 25 50 °C/W Device Marking FDS4435BZ Device FDS4435BZ_F085 Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500units ©2009 Fairchild Semiconductor Corporation FDS4435BZ_F085 Rev.A 1 www.fairchildsemi.com FDS4435BZ_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature C

Key Features

  • Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A.
  • Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A.
  • Extended VGSS range (-25V) for battery.

FDS4435BZ_F085 Distributor & Price

Compare FDS4435BZ_F085 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.