FDS4465_F085 Datasheet | Fairchild Semiconductor

FDS4465_F085 P-Channel 1.8V Specified PowerTrench® MOSFET June 2012 P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V - 8V). Applications - Power management - Load switch - Battery protection Features - - 13.5 A, - 20 V. RDS(ON) = 8.5 mΩ @ VGS = - 4.5 V RDS(ON) = 10.5 mΩ @ VGS = - 2.5 V RDS(ON) = 14 mΩ @ VGS = - 1.8 V - Fast switching speed - High performance trench technology for extremely low RDS(ON) - High current and power handling...