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FDS4559 - 60V Complementary PowerTrench MOSFET

General Description

This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Q1: N-Channel 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V RDS(on) = 75 mΩ @ VGS = 4.5V.
  • Q2: P-Channel.
  • 3.5 A,.
  • 60 V RDS(on) = 105 mΩ @ VGS =.
  • 10V RDS(on) = 135 mΩ @ VGS =.
  • 4.5V.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V RDS(on) = 75 mΩ @ VGS = 4.5V • Q2: P-Channel –3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V RDS(on) = 135 mΩ @ VGS = –4.