Datasheet4U Logo Datasheet4U.com

FDS4559 - MOSFET

General Description

This complementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Q1: N.
  • Channel.
  • 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V.
  • Q2: P.
  • Channel.
  • 3.5 A,.
  • 60 V RDS(on) = 105 mΩ @ VGS =.
  • 10 V RDS(on) = 135 mΩ @ VGS =.
  • 4.5 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS4559 60V Complementary PowerTrench MOSFET Fairchild Semiconductor
FDS4559-NL Dual-Channel MOSFET VBsemi
FDS4501H Complementary PowerTrench Half-Bridge MOSFET Fairchild Semiconductor
FDS4070N3 N-Channel MOSFET Fairchild Semiconductor
FDS4070N7 N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS4435BZ P-Channel MOSFET
FDS4435BZ-F085 P-Channel Power MOSFET
FDS4465 P-Channel MOSFET
FDS4465-F085 P-Channel MOSFET
FDS4465-G P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Complementary, POWERTRENCH) 60 V FDS4559 General Description This complementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N−Channel ♦ 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V • Q2: P−Channel ♦ −3.5 A, −60 V RDS(on) = 105 mΩ @ VGS = –10 V RDS(on) = 135 mΩ @ VGS = –4.