FDS4559 Description
This plementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
FDS4559 Key Features
- Q1: N-Channel
- 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V
- Q2: P-Channel
- 3.5 A, -60 V RDS(on) = 105 mΩ @ VGS = -10 V RDS(on) = 135 mΩ @ VGS = -4.5 V