FDS4675 Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 20V).
FDS4675 Key Features
- 11 A, -40 V RDS(ON) = 0.013 Ω @ V GS = -10 V RDS(ON) = 0.017 Ω @ V GS = -4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability