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FDS4675-F085 - 40V P-Channel MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced Power Tranch process.

20 V).

Power management Load switch

Key Features

  • -11 A, -40 V RDS(ON) = 0.013 Ω @ VGS = -10 V RDS(ON) = 0.017 Ω @ VGS = -4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Qualified to AEC Q101.
  • RoHS Compliant Absolute Maximum Ratings TA = 25℃ unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS ID Gate-Source Voltage Drain Current Co n ti n u o u s Pu l se d PD Power Dissipation.

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FDS4675-F085 — 40V P-ChannelTrench® MOSFET FDS4675-F085 40V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced Power Tranch process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V). Applications • Power management • Load switch • Battery protection Features • -11 A, -40 V RDS(ON) = 0.013 Ω @ VGS = -10 V RDS(ON) = 0.017 Ω @ VGS = -4.