FDS4675-F085 Datasheet | onsemi

Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced Power Tranch process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V - 20 V). Applications - Power management - Load switch - Battery protection Features - -11 A, -40 V RDS(ON) = 0.013 Ω @ VGS = -10 V RDS(ON) = 0.017 Ω @ VGS = -4.5 V - Fast switching speed - High performance trench technology for extremely low RDS(ON) - High power and current handling capability - Qualified to AEC Q101 - Ro HS pliant Absolute Maximum Ratings TA = 25℃ unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS ID Gate-Source Voltage Drain Current Co n ti n u o u s Pu l se d Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Ambient RθJC Thermal Resistance, Junction to Case Package Marking and Ordering Information Dev ice Marking Dev ice Reel Size FDS4675 13”...