FDS4435BZ Key Features
- Max RDS(on) = 20 mW at VGS = -10 V, ID = -8.8 A
- Max RDS(on) = 35 mW at VGS = -4.5 V, ID = -6.7 A
- Extended VGSS Range (-25 V) for Battery
- Part: FDS4435BZ
- Description: P-Channel MOSFET
- Manufacturer: onsemi
- Size: 312.48 KB
Other FDS4435BZ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDS4435BZ | P-Channel PowerTrench MOSFET |
VBsemi |
FDS4435BZ | P-Channel MOSFET |
|
Fairchild Semiconductor |
FDS4435BZ_F085 | P-Channel PowerTrench MOSFET |
|
Fairchild Semiconductor |
FDS4435 | P-Channel MOSFET |
| UMW UMW |
FDS4435 | -30V P-Channel MOSFET |