FDS4435BZ - P-Channel MOSFET

onsemi

General Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Key Features

Max RDS(on) = 20 mW at VGS =.
10 V, ID =.
8.8 A.
Max RDS(on) = 35 mW at VGS =.
4.5 V, ID =.
6.7 A.
Extended VGSS Range (.
25 V) for Battery.

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FDS4435BZ p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS4435BZ
Manufacturer	onsemi
File Size	312.48 KB
Description	P-Channel MOSFET
Datasheet	FDS4435BZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A • Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A • Extended VGSS Range (−25 V) for Battery Applications • HBM ESD Protection Level of ±3.