FDS4465 Description
This P−Channel 1.8 V specified MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V 8 V).
FDS4465 Key Features
- 13.5 A, -20 V
- RDS(on) = 8.5 mΩ @ VGS = -4.5 V
- RDS(on) = 10.5 mΩ @ VGS = -2.5 V
- RDS(on) = 14 mΩ @ VGS = -1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- High Current and Power Handling Capability