FDS4465
FDS4465 is P-Channel MOSFET manufactured by onsemi.
Description
This P- Channel 1.8 V specified MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V- 8 V).
Features
- - 13.5 A,
- 20 V
- RDS(on) = 8.5 mΩ @ VGS =
- 4.5 V
- RDS(on) = 10.5 mΩ @ VGS =
- 2.5 V
- RDS(on) = 14 mΩ @ VGS =
- 1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- High Current and Power Handling Capability
Applications
- Power Management
- Load Switch
- Battery Protection
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain- to- Source Voltage
- 20
VGSS Gate- to- Source Voltage
±8
Drain Current
Continuous (Note 1a)
- 13.5
Pulsed
- 50
Power Dissipation
(Note 1a) (Note...
