FDS4465 Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).
FDS4465 Key Features
- 13.5 A, -20 V. RDS(ON) = 8.5 mΩ @ VGS = -4.5 V RDS(ON) = 10.5 mΩ @ VGS = -2.5 V RDS(ON) = 14 mΩ @ VGS = -1.8 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability