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FDS4465 - P-Channel MOSFET

General Description

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

8V).

Key Features

  • 13.5 A,.
  • 20 V. RDS(ON) = 8.5 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 10.5 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 14 mΩ @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High current and power handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4465 March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V RDS(ON) = 10.5 mΩ @ VGS = –2.5 V RDS(ON) = 14 mΩ @ VGS = –1.