FDS4465
FDS4465 is P-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V
- 8V).
Features
- - 13.5 A,
- 20 V. RDS(ON) = 8.5 mΩ @ VGS =
- 4.5 V RDS(ON) = 10.5 mΩ @ VGS =
- 2.5 V RDS(ON) = 14 mΩ @ VGS =
- 1.8 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability
Applications
- Power management
- Load switch
- Battery protection
D D D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
- 20 ±8
(Note 1a)
Units
- 13.5
- 50 2.5 1.5 1.2
- 55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note...
