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FDS4465-G Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, POWERTRENCH) 1.8 V Specified FDS4465, FDS4465-G.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This P−Channel 1.8 V specified MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process.

It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V–8 V).

Key Features

  • 13.5 A,.
  • 20 V.
  • RDS(on) = 8.5 mΩ @ VGS =.
  • 4.5 V.
  • RDS(on) = 10.5 mΩ @ VGS =.
  • 2.5 V.
  • RDS(on) = 14 mΩ @ VGS =.
  • 1.8 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Current and Power Handling Capability.

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