FDS4465-G Datasheet | onsemi

Description This P- Channel 1.8 V specified MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V- 8 V). Features - - 13.5 A, - 20 V - RDS(on) = 8.5 mΩ @ VGS = - 4.5 V - RDS(on) = 10.5 mΩ @ VGS = - 2.5 V - RDS(on) = 14 mΩ @ VGS = - 1.8 V - Fast Switching Speed - High Performance Trench Technology for Extremely Low RDS(on) - High Current and Power Handling Capability Applications - Power Management - Load Switch - Battery Protection Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain- to- Source Voltage - 20 VGSS Gate- to- Source Voltage ±8 Drain Current Continuous (Note 1a) - 13.5 Pulsed - 50 Power Dissipation (Note 1a) (Note...