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FDS5670 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications.

Key Features

  • • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 60 (Note 1a) Units V V A W ±20 10 50 2.5 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS5670 August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.