FDS5672 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. FDS5672 N-Channel PowerTrench® MOSFET Resistive Switching Characteristics.
FDS5672 Key Features
- rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
- rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability