FDS6673BZ_F085
Overview
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
- Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
- Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6.5kV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS compliant
- Qualified to AEC Q101 DD
- D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current -Continuous -Pulsed (Note1a) Power Dissipation for Single Operation (Note1a) PD (Note1b) (Note1c) TJ, TSTG Operating and Storage Temperature Ratings -30 ±25 -14.5 -75 2.5 1.2 1.0 -55 to 150
