FDS6673BZ_F085 - P-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS6673BZ_F085
Manufacturer	Fairchild Semiconductor
File Size	462.35 KB
Description	P-Channel PowerTrench MOSFET
Datasheet	FDS6673BZ_F085 Datasheet
Additional preview pages of the FDS6673BZ_F085 datasheet.

Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

Features

Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A.
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A.
Extended VGS range (-25V) for battery.

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Published: Aug 15, 2015 |