Fairchild Semiconductor FDS6679
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.| Part No. | FDS6679 |
|---|---|
| Datasheet | FDS6679 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 30 Volt P-Channel PowerTrench MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.FEATURES
● –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V RDS(ON) = 13 mΩ @ VGS = – 4.5 V● Extended VGSS range (±25V) for battery applications
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability D D D D SO-8 G SS S
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6679 FDS6679 13’’ 54 63 72 81 Ratings –30 ±25 –13 –5...
