FDS6679 Datasheet | Fairchild Semiconductor

Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - - 13 A, - 30 V. RDS(ON) = 9 mΩ @ VGS = - 10 V RDS(ON) = 13 mΩ @ VGS = - 4.5 V - Extended VGSS range (±25V) for battery applications - High performance trench technology for extremely low RDS(ON) - High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 13’’ 54 63 72 81 Ratings - 30...