FDS6679AZ
FDS6679AZ is P-Channel MOSFET manufactured by onsemi.
Description
This P-Channel MOSFET is producted using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max r DS(on) = 9.3mΩ at VGS = -10V, ID = -13A
- Max r DS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6k V typical (note 3)
- High performance trench technology for extremely low r DS(on)
- High power and current handing capability
- Ro HS pliant
SO-8
SS S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG Operating and Storage Temperature
Ratings -30 ±25 -13 -65 2.5 1.2 1.0
-55 to +150
Units V V A
°C
Thermal Characteristics
RθJA RθJC
Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1)
°C/W
°C/W
Package Marking and Ordering Information
Device Marking...
