FDS6679AZ Description
This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS6679AZ Key Features
- Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
- Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
- Extended VGS range (-25V) for battery
FDS6679AZ Applications
- Pulsed Power Dissipation for Single Operation