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FDS6679AZ - P-Channel MOSFET

General Description

This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Key Features

  • Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A.
  • Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A.
  • Extended VGS range (-25V) for battery.

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Datasheet Details

Part number FDS6679AZ
Manufacturer onsemi
File Size 438.67 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS6679AZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6679AZ P-Channel PowerTrench® MOSFET FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ General Description This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features „ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A „ Max rDS(on) = 14.8mΩ at VGS = -4.