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FDS6679AZ - P-Channel PowerTrench MOSFET

Description

This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

Features

  • Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A.
  • Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A.
  • Extended VGS range (-25V) for battery.

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Full PDF Text Transcription

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FDS6679AZ P-Channel PowerTrench® MOSFET FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ General Description This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. March 2009 tm Features „ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A „ Max rDS(on) = 14.8mΩ at VGS = -4.
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