Datasheet4U Logo Datasheet4U.com

FDS6675BZ - P-Channel PowerTrench MOSFET

Features

  • This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching.

📥 Download Datasheet

Datasheet preview – FDS6675BZ

Datasheet Details

Part number FDS6675BZ
Manufacturer Fairchild Semiconductor
File Size 396.32 KB
Description P-Channel PowerTrench MOSFET
Datasheet download datasheet FDS6675BZ Datasheet
Additional preview pages of the FDS6675BZ datasheet.

📁 Similar Datasheet

  • FDS6675BZ - P-Channel MOSFET (On Semiconductor)
  • FDS6675 - P-Channel MOSFET (ON Semiconductor)
  • FDS6673BZ - P-Channel MOSFET (ON Semiconductor)
  • FDS6673BZ-F085 - P-Channel MOSFET (ON Semiconductor)
  • FDS6676AS - N-Channel MOSFET (ON Semiconductor)
  • FDS6676AS-G - N-Channel MOSFET (ON Semiconductor)
  • FDS6679AZ - P-Channel MOSFET (ON Semiconductor)
  • FDS6612A - N-Channel MOSFET (ON Semiconductor)
  • FDS6680A - N-Channel MOSFET (ON Semiconductor)
  • FDS6681Z - 30V P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A „ Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 5.
Published: |