This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching.
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FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is produ...
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ch 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A Extended VGS range (-25V) for battery applications HBM ESD protection level of 5.
FDS6675BZ Datasheet
