FDS6675BZ Datasheet | Fairchild Semiconductor

FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. - Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A - Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A - Extended VGS range (-25V) for battery applications - HBM ESD protection level of 5.4 KV typical (note 3) - High performance trench technology for...