FDS6675BZ
Overview
- Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
- Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 5.4 KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handing capability
- RoHS Compliant DD
- D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note 1a) Power Dissipation for Single Operation (Note 1a) PD (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Temperature Ratings -30 ±25 -11 -55 2.5 1.2 1.0 -55 to 150
