Datasheet4U Logo Datasheet4U.com

FDS6675A - 30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

25V).

Power management Load switch

Key Features

  • 11 A,.
  • 30 V RDS(ON) = 13 mΩ @ VGS =.
  • 10 V RDS(ON) = 19 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Curren.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS6675A February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –11 A, –30 V RDS(ON) = 13 mΩ @ VGS = –10 V RDS(ON) = 19 mΩ @ VGS = –4.