FDS6673AZ
Overview
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
- -14.5 A, -30 V. RDS(ON) = 7.2 mΩ @ VGS = -10 V RDS(ON) = 11 mΩ @ VGS = - 4.5 V
- Extended VGSS range (-25V) for battery applications
- ESD protection diode (note 3)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- 5 6 4 3 2 1 SO-8 S S S G 7 8
