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FDS6673BZ - P-Channel MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A.
  • Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A.
  • Extended VGS range (-25V) for battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.