FDS6673BZ Datasheet | Fairchild Semiconductor

.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Features - Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A - Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A - Extended VGS range (-25V) for battery applications - HBM ESD protection level of 6.5kV typical (note 3) - High performance trench...