Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D D
D
5
4 3 2 1
S FD 75 66
pin 1
6
G
7 8
SO-8
S S
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
FDS6675 Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain C.
FDS6675 Datasheet
