FDS6676AS-G - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDS6676AS-G
Manufacturer	ON Semiconductor
File Size	263.76 KB
Description	N-Channel MOSFET
Datasheet	FDS6676AS-G Datasheet
Note	This datasheet PDF includes multiple part numbers: FDS6676AS-G, FDS6676AS. Please refer to the document for exact specifications by model.
Additional preview pages of the FDS6676AS-G datasheet.

The FDS6676AS is designed to replace a single SO

and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

14.5 A, 30 V.
RDS(ON) Max = 6.0 mW at VGS = 10 V.
RDS(ON) Max = 7.25 mW at VGS = 4.5 V.
Includes SyncFET Schottky Body Diode.
Low Gate Charge (45 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching.
High Power and Current Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 25, 2023 |