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FDS6676AS-G - N-Channel MOSFET

Download the FDS6676AS-G datasheet PDF. This datasheet also covers the FDS6676AS variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The FDS6676AS is designed to replace a single SO

and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 14.5 A, 30 V.
  • RDS(ON) Max = 6.0 mW at VGS = 10 V.
  • RDS(ON) Max = 7.25 mW at VGS = 4.5 V.
  • Includes SyncFET Schottky Body Diode.
  • Low Gate Charge (45 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDS6676AS-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6676AS 30V N-Channel PowerTrench SyncFET Fairchild Semiconductor
FDS6676 30V N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDS6676S N-Channel MOSFET Fairchild Semiconductor
FDS6670A N-Channel MOSFET Fairchild Semiconductor
FDS6670AS 30V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS6676AS N-Channel MOSFET
FDS6673BZ P-Channel MOSFET
FDS6673BZ-F085 P-Channel MOSFET
FDS6675 P-Channel MOSFET
FDS6675BZ P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SyncFETt – N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General Description The FDS6676AS is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology. Features • 14.5 A, 30 V ♦ RDS(ON) Max = 6.0 mW at VGS = 10 V ♦ RDS(ON) Max = 7.25 mW at VGS = 4.