FDS6676AS Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: SyncFETt – N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General.

Datasheet Details

The FDS6676AS is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.

14.5 A, 30 V.
RDS(ON) Max = 6.0 mW at VGS = 10 V.
RDS(ON) Max = 7.25 mW at VGS = 4.5 V.
Includes SyncFET Schottky Body Diode.
Low Gate Charge (45 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching.
High Power and Current Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant.

Part Number	Description	Manufacturer
FDS6676AS	30V N-Channel PowerTrench SyncFET	Fairchild Semiconductor
FDS6676	30V N-Channel PowerTrench MOSFET	Fairchild Semiconductor
FDS6676S	N-Channel MOSFET	Fairchild Semiconductor