FDS6676
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
- 14.5 A, 30 V. RDS(ON) = 7 mΩ @ V GS = 10 V RDS(ON) = 8 mΩ @ V GS = 4.5 V
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (45 nC typ)
- High power and current handling capability
