FDS6673BZ-F085 Description
Features Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications resistance. HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and...
FDS6673BZ-F085 Key Features
- Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
- Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery