FDS6673BZ-F085 Datasheet | onsemi

FDS6673BZ-F085 P-Channel PowerTrench® MOSFET P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description Features - Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state - Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A - Extended VGS range (-25V) for battery applications resistance. - HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. - High performance trench technology for extremely low...