FDS6673BZ-F085
Overview
- Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state
- Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery applications resistance.
- HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS compliant
- Qualified to AEC Q101 *
- 5 4 6 3 G 7 2 SO-8 SS S 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note1a) Power Dissipation for Single Operation (Note1a)
