Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-30 V, -11 A, 13 mW
Description This P-Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max RDS(on) = 13 mW at VGS =
- 10 V, ID =
- 11 A
- Max RDS(on) = 21.8 mW at VGS =
- 4.5 V, ID =
- 9 A
- Extended VGS Range (- 25 V) for Battery Applications
- HBM ESD Protection Level of 5.4 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This...
