FDS6673BZ
FDS6673BZ is P-Channel MOSFET manufactured by onsemi.
MOSFET
- P-Channel, POWERTRENCH)
-30 V, -14.5 A, 7.8 mW
General Description This P- Channel MOSFET is produced using onsemi’s advanced
Power Trench process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max RDS(on) = 7.8 mW @ VGS =
- 10 V, ID =
- 14.5 A
- Max RDS(on) = 12 mW @ VGS =
- 4.5 V, ID =
- 12 A
- Extended VGS Range (- 25 V) for Battery Applications
- HBM ESD Protection Level of 6.5 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
-...
