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FDS6673BZ - P-Channel MOSFET

General Description

This P Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on

state resistance.

Key Features

  • Max RDS(on) = 7.8 mW @ VGS =.
  • 10 V, ID =.
  • 14.5 A.
  • Max RDS(on) = 12 mW @ VGS =.
  • 4.5 V, ID =.
  • 12 A.
  • Extended VGS Range (.
  • 25 V) for Battery.

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Datasheet Details

Part number FDS6673BZ
Manufacturer onsemi
File Size 282.02 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS6673BZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -30 V, -14.5 A, 7.8 mW FDS6673BZ General Description This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A • Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 6.5 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.