Part Number	FDS6673BZ
Manufacturer	onsemi
Overview	This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management an. * Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A * Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A * Extended VGS Range (−25 V) for Battery Applications * HBM ESD Protection Level of 6.5 kV Typical (Note 3) * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Hand.