FDS6673BZ Description
This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS6673BZ Key Features
- Max RDS(on) = 7.8 mW @ VGS = -10 V, ID = -14.5 A
- Max RDS(on) = 12 mW @ VGS = -4.5 V, ID = -12 A
- Extended VGS Range (-25 V) for Battery