Part Number	FDS6675BZ
Manufacturer	onsemi
Overview	This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and. * Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A * Max RDS(on) = 21.8 mW at VGS = −4.5 V, ID = −9 A * Extended VGS Range (−25 V) for Battery Applications * HBM ESD Protection Level of 5.4 kV Typical (Note 3) * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Hand.