FDS6699S Datasheet | Fairchild Semiconductor

Features - 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V - Includes Sync FET Schottky body diode - High performance trench technology for extremely low RDS(ON) and fast switching - High power and current handling capability - 100% RG (Gate Resistance) tested Applications - Synchronous Rectifier for DC/DC Converters - - Notebook Vcore low side switch - Point of Load low side switch General Description The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. SO-8 G SS S 54 63 72 81 Absolute Maximum Ratings TA=25°C unless otherwise...