FDS6699S Datasheet | onsemi

Description The FDS6699S is designed to replace a single SO- 8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic Sync FET technology. Features - 21 A, 30 V - Max RDS(on) = 3.6 m W at VGS = 10 V - Max RDS(on) = 4.5 m W at VGS = 4.5 V - Includes Sync FET Schottky Body Diode - High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching - High Power and Current Handling Capability - 100% RG (Gate Resistance) Tested - These Devices are Pb- Free and are Ro HS pliant Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore Low Side Switch - Point of Load Low Side Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol VDSS VGSS ID Parameter Drain- Source Voltage Gate- Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Ratings Unit ±20 A 21 105 EAS Single Pulse Avalanche Energy (Note 4) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range 541 m J W 2.5 1.2 1 - 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rq JA Thermal Resistance, Junction- to- Ambient (Note...