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FDS6699S - N-Channel MOSFET

Datasheet Summary

Description

The FDS6699S is designed to replace a single SO

Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.

Features

  • 21 A, 30 V.
  • Max RDS(on) = 3.6 mW at VGS = 10 V.
  • Max RDS(on) = 4.5 mW at VGS = 4.5 V.
  • Includes SyncFET Schottky Body Diode.
  • High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
  • High Power and Current Handling Capability.
  • 100% RG (Gate Resistance) Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDS6699S

Datasheet Details

Part number FDS6699S
Manufacturer ON Semiconductor
File Size 197.93 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS6699S Datasheet
Additional preview pages of the FDS6699S datasheet.

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Full PDF Text Transcription

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SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 3.6 mW FDS6699S General Description The FDS6699S is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology. Features • 21 A, 30 V ♦ Max RDS(on) = 3.6 mW at VGS = 10 V ♦ Max RDS(on) = 4.5 mW at VGS = 4.
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