FDS6875 - Dual P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS6875
Manufacturer	Fairchild Semiconductor
File Size	194.66 KB
Description	Dual P-Channel MOSFET
Datasheet	FDS6875 Datasheet
Additional preview pages of the FDS6875 datasheet.

Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2 1 S FD 75 68 G1 S2 G2 6 7 8 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless.

📁 Similar Datasheet

FDS6875-NL - Dual P-Channel 30V MOSFET (VBsemi)
FDS6898A - Dual N-Channel MOSFET (ON Semiconductor)
FDS6898AZ-F085 - Dual N-Channel MOSFET (ON Semiconductor)
FDS6298 - N-Channel MOSFET (ON Semiconductor)
FDS6570A - N-Channel MOSFET (ON Semiconductor)
FDS6574A - N-Channel MOSFET (ON Semiconductor)
FDS6575 - P-Channel 20V MOSFET (VBsemi)
FDS6612A - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDS6812A - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6814 - Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS6815 - Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS6890A - Dual N-Channel MOSFET
FDS6892A - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892AZ - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Published: Mar 30, 2005 |