FDS6975 Datasheet | Fairchild Semiconductor

February 1999 FDS6975 Dual P-Channel, Logic Level, Power Trench TM MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5n C typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 D1 D1 S FD 75 69 S2 G2 G1 5 6 7 8 4 3 2 1 SO-8 pin...