| Part Number | FDS6975 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | These P-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate c. -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 FD69S75 SO-8 G2 S2 pin 1 . |
FDS6975 Datasheet and Specifications PDF
The FDS6975 is a Dual P-Channel MOSFET.
Key Specifications
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDS6975 Datasheet |
|---|---|
| Description | Dual P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview | These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low. -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 D1 D1 S FD 7. |