Datasheet4U Logo Datasheet4U.com

FDS6993 - Dual P-Channel PowerTrench MOSFET

Description

These P-Channel MOSFETs are made using FSC’s PowerTrench® technology.

They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink.

The combination of silicon and package technologies results in minimum board space and cost.

Features

  • Q1: P-Channel.
  • 4.3A,.
  • 30V RDS(on) = 55mΩ @ VGS =.
  • 10V.
  • Q2: RDS(on) = 85mΩ @ VGS =.
  • 4.5V P-Channel.
  • 6.8A,.
  • 12V RDS(on) = 17mΩ @ VGS =.
  • 4.5V RDS(on) = 24mΩ @ VGS =.
  • 2.5V.
  • RDS(on) = 30mΩ @ VGS =.
  • 1.8V High power and handling capability in a widely used surface mount package D1 D D1 D DD2 D2 D 5 6 7 G2 S2 G Q2 4 3 2 Q1 SO-8 Pin 1 SO-8 G1 S1 S S 8 1 S Absolute Maximum Ratings Symbol VDSS V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6900AS Dual N-Channel MOSFET ON Semiconductor
FDS6900AS-G Dual N-Channel MOSFET ON Semiconductor
FDS6910 Dual N-Channel MOSFET ON Semiconductor
FDS6912A Dual N-Channel MOSFET ON Semiconductor
FDS6930A Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDS6990A Dual N-Channel MOSFET
FDS6990AS MOSFET
FDS6990S Dual 30V N-Channel PowerTrench SyncFET
FDS6994S MOSFET
FDS6900AS Dual N-Ch PowerTrench SyncFET

Full PDF Text Transcription

Click to expand full text
FDS6993 June 2003 FDS6993 Dual P-Channel PowerTrench® MOSFET General Description These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features • Q1: P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V • Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel –6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V RDS(on) = 24mΩ @ VGS = –2.5V • RDS(on) = 30mΩ @ VGS = –1.
Published: |