FDS6993 Description
These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The bination of silicon and package technologies results in minimum board space and cost.
FDS6993 Key Features
- Q1: P-Channel -4.3A, -30V RDS(on) = 55mΩ @ VGS = -10V
- Q2: RDS(on) = 85mΩ @ VGS = -4.5V P-Channel
- 6.8A, -12V RDS(on) = 17mΩ @ VGS = -4.5V RDS(on) = 24mΩ @ VGS = -2.5V
- RDS(on) = 30mΩ @ VGS = -1.8V High power and handling capability in a widely used surface mount package