FDS7060N7 Datasheet | Fairchild Semiconductor

May 2003 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features - 19 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V - High performance trench technology for extremely low RDS(ON) - High power and current handling capability - Fast switching, low gate charge (35nC typical) - FLMP SO-8 package: Enhanced thermal performance in industry-standard...