FDS7082N3 Description
This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.
FDS7082N3 Key Features
- 17.5 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
- High performance trench technology for extremely low RDS(ON)
- Low Qg and Rg for fast switching
- FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline