FDS8433A Datasheet | Fairchild Semiconductor

October 1998 PRELIMINARY Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Features - -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V - - - Fast switching speed. High density cell design for extremely low RDS(on). High power and current handling capability. Applications - - - Load switch DC/DC converter Battery protection 5 6 7 4 3 2...