Datasheet4U Logo Datasheet4U.com

FDS8433A - Single P-Channel 2.5V Specified MOSFET

General Description

This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V.
  • Fast switching speed. High density cell design for extremely low RDS(on). High power and current handling capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS8433A P-Channel MOSFET ON Semiconductor
FDS8447 N-Channel 40V MOSFET VBsemi
FDS8449 N-Channel MOSFET ON Semiconductor
FDS8449-F085 N-Channel MOSFET ON Semiconductor
FDS86141 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS8447 Single N-Channel PowerTrench MOSFET
FDS8449 N-Channel PowerTrench MOSFET
FDS8449_F085 40V N-Channel PowerTrench MOSFET
FDS8333C 30V N & P-Channel PowerTrench MOSFETs
FDS86106 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS8433A October 1998 PRELIMINARY FDS8433A Single P-Channel 2.5V Specified MOSFET General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Features • -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • • • Fast switching speed. High density cell design for extremely low RDS(on). High power and current handling capability.